The Licensing and Intellectual Property Department of JINR announces that on 8 November 2018, the Joint Institute for Nuclear Research received a patent for the invention “Planar semiconductor detector”. The authors of the work are Shelkov Georgiy Aleksandrovich, Kozhevnikov Danila Aleksandrovich, Smolyanskiy Petr Igorevich, Kotov Sergey Anatolevich, Kruchonok Vladimir Gennadevich, Zhemchugov Aleksey Sergeevich, Lejva Fabelo Antonio.

JINR staff congratulates the authors on receiving the patent for their invention!

More details about the invention

Planar semiconductor detector is designed to register radiation in nuclear physics, high energy physics, as well as in digital devices that register charged particles, gamma rays and x-rays. Contact electrodesin the form of metallization are made on both sides of the detector. Metallization of the face (facing the source of ionizing radiation) surface has the form of a small-area grid with a strip width of 3–10 microns and with a step of 30–100 microns. Technical result of the invention is to increase the efficiency of registration of ionizing radiation (in particular, soft x-ray) and improving the measurement of the energy of heavy charged particles (in particular, α-particles) by planar detectors based on semiconductor materials by reducing the absorption of ionizing radiation in the material of the front electrode with an insignificant change in the electric field inside the detector.
EFFECT: technical result of the invention is to increase the efficiency of registration of ionizing radiation (in particular, soft x-rays) and to improve the measurement of the energy of heavy charged particles.