The Licensing and Intellectual Property Department of JINR announces that on 3 July 2018, the Joint Institute for Nuclear Research received a patent for the invention “Semiconductor pixel detector of charged strongly ionized particles (multicharged ions)”. The authors of the work are Shelkov Georgij Aleksandrovich, Kozhevnikov Danila Aleksandrovich, Smolyanskij Petr Igorevich, Demichev Mikhail Andreevich, Kotov Sergej Anatolevich, Kruchonok Vladimir Gennadevich, Zhemchugov Aleksej Sergeevich, Abdelshakur El Said Mokhammed Abu Elazm.

JINR staff congratulates the authors on receiving the patent for their invention!

More details about the invention

SUBSTANCE: use:to create a semiconductor pixel detector of highly ionizing charged particles. Summary of the invention consists in that the detector comprises a series connection of a monolithic layer of a highresistance semiconductor material (sensor) with a solid outer and pixelinternal metal electrodes and a recording pixel microcircuit with a gain of at least 80 mV/fKl, the source of the bias voltage is excluded from the detector circuit and a resistor is added which is connected to the external metal electrode of the sensor and the recording circuit.

EFFECT: providing the possibility of simplifying the design of the detector, reducing the weight and power consumption of such equipment, improving the reliability of the detector and the convenience of its operation.